Toward RF-linearity for planar local back- and top-gate SB-CNTFETs

RF-linearity at device level is becoming increasingly valuable for future communication systems. It has recently been reported that Schottky barrier (SB) CNTFETs offer high linearity under realistic conditions. In this paper, the potential of SB-CNTFETs for high RF-linearity is studied. The latter demands a compromise between excellent Schottky barrier control and high extrinsic high-frequency performance. Depending on the actual gate architecture, different design rules toward high RF-linearity for top- and local back-gate devices are elaborated.