DocumentCode :
3667906
Title :
Theoretical study of the spontaneous electron-hole exciton condensates between n and p-type MoS2 monolayers, toward beyond CMOS applications
Author :
Xian Wu;Xuehao Mou;Leonard F. Register;Sanjay K. Banerjee
Author_Institution :
Microelectronics Research Center, The University of Texas at Austin, 10100 Burnet Road Building 160, 78758, USA
fYear :
2015
Firstpage :
124
Lastpage :
127
Abstract :
We model equilibrium properties of possible room-temperature electron-hole exciton condensates formed between two dielectrically separated transition metal dichalcogenide (TMD) layers, MoS2 layers here, toward application to novel beyond CMOS devices. Our simulation method employs an interlayer Fock exchange interaction incorporated into an otherwise intra-layer tight-binding Hamiltonian within a maximally-localized Wannier function (MLWF) basis set.
Keywords :
"Excitons","Photonic band gap","Electric potential","Elementary particle exchange interactions","Discrete Fourier transforms","Registers","Metals"
Publisher :
ieee
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2015 International Conference on
ISSN :
1946-1569
Print_ISBN :
978-1-4673-7858-1
Type :
conf
DOI :
10.1109/SISPAD.2015.7292274
Filename :
7292274
Link To Document :
بازگشت