• DocumentCode
    3667906
  • Title

    Theoretical study of the spontaneous electron-hole exciton condensates between n and p-type MoS2 monolayers, toward beyond CMOS applications

  • Author

    Xian Wu;Xuehao Mou;Leonard F. Register;Sanjay K. Banerjee

  • Author_Institution
    Microelectronics Research Center, The University of Texas at Austin, 10100 Burnet Road Building 160, 78758, USA
  • fYear
    2015
  • Firstpage
    124
  • Lastpage
    127
  • Abstract
    We model equilibrium properties of possible room-temperature electron-hole exciton condensates formed between two dielectrically separated transition metal dichalcogenide (TMD) layers, MoS2 layers here, toward application to novel beyond CMOS devices. Our simulation method employs an interlayer Fock exchange interaction incorporated into an otherwise intra-layer tight-binding Hamiltonian within a maximally-localized Wannier function (MLWF) basis set.
  • Keywords
    "Excitons","Photonic band gap","Electric potential","Elementary particle exchange interactions","Discrete Fourier transforms","Registers","Metals"
  • Publisher
    ieee
  • Conference_Titel
    Simulation of Semiconductor Processes and Devices (SISPAD), 2015 International Conference on
  • ISSN
    1946-1569
  • Print_ISBN
    978-1-4673-7858-1
  • Type

    conf

  • DOI
    10.1109/SISPAD.2015.7292274
  • Filename
    7292274