DocumentCode
3667906
Title
Theoretical study of the spontaneous electron-hole exciton condensates between n and p-type MoS2 monolayers, toward beyond CMOS applications
Author
Xian Wu;Xuehao Mou;Leonard F. Register;Sanjay K. Banerjee
Author_Institution
Microelectronics Research Center, The University of Texas at Austin, 10100 Burnet Road Building 160, 78758, USA
fYear
2015
Firstpage
124
Lastpage
127
Abstract
We model equilibrium properties of possible room-temperature electron-hole exciton condensates formed between two dielectrically separated transition metal dichalcogenide (TMD) layers, MoS2 layers here, toward application to novel beyond CMOS devices. Our simulation method employs an interlayer Fock exchange interaction incorporated into an otherwise intra-layer tight-binding Hamiltonian within a maximally-localized Wannier function (MLWF) basis set.
Keywords
"Excitons","Photonic band gap","Electric potential","Elementary particle exchange interactions","Discrete Fourier transforms","Registers","Metals"
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices (SISPAD), 2015 International Conference on
ISSN
1946-1569
Print_ISBN
978-1-4673-7858-1
Type
conf
DOI
10.1109/SISPAD.2015.7292274
Filename
7292274
Link To Document