• DocumentCode
    3667912
  • Title

    3D KMC reliability simulation of nano-scaled HKMG nMOSFETs with multiple traps coupling

  • Author

    Yun Li; Zhiyuan Lun;Peng Huang;Yijiao Wang; Hai Jiang;Gang Du;Xiaoyan Liu

  • Author_Institution
    Institute of Microelectronics, Peking University, Beijing, 100871, China
  • fYear
    2015
  • Firstpage
    148
  • Lastpage
    151
  • Abstract
    This paper presents coupling characteristics of multiple traps in HKMG nMOSFETs by a 3D kinetic Monte-Carlo (KMC) simulator we developed, which includes several fully-coupled multi-physical models: trap generation/recombination, trapping/detrapping to/from channel, metal gate, and the interaction of traps. It shows that activation energy and trapping/detrapping from/to channel/gate impact on coupling of multiple traps. Interaction of traps complicates mechanism in TAT current, BTI, and RTN.
  • Keywords
    "Charge carrier processes","Logic gates","Couplings","Mathematical model","MOSFET","Temperature measurement","Three-dimensional displays"
  • Publisher
    ieee
  • Conference_Titel
    Simulation of Semiconductor Processes and Devices (SISPAD), 2015 International Conference on
  • ISSN
    1946-1569
  • Print_ISBN
    978-1-4673-7858-1
  • Type

    conf

  • DOI
    10.1109/SISPAD.2015.7292280
  • Filename
    7292280
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3667912