Title :
3D KMC reliability simulation of nano-scaled HKMG nMOSFETs with multiple traps coupling
Author :
Yun Li; Zhiyuan Lun;Peng Huang;Yijiao Wang; Hai Jiang;Gang Du;Xiaoyan Liu
Author_Institution :
Institute of Microelectronics, Peking University, Beijing, 100871, China
Abstract :
This paper presents coupling characteristics of multiple traps in HKMG nMOSFETs by a 3D kinetic Monte-Carlo (KMC) simulator we developed, which includes several fully-coupled multi-physical models: trap generation/recombination, trapping/detrapping to/from channel, metal gate, and the interaction of traps. It shows that activation energy and trapping/detrapping from/to channel/gate impact on coupling of multiple traps. Interaction of traps complicates mechanism in TAT current, BTI, and RTN.
Keywords :
"Charge carrier processes","Logic gates","Couplings","Mathematical model","MOSFET","Temperature measurement","Three-dimensional displays"
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2015 International Conference on
Print_ISBN :
978-1-4673-7858-1
DOI :
10.1109/SISPAD.2015.7292280
