Analysis of the soft error rates on 65-nm SOTB and 28-nm UTBB FD-SOI structures by a PHITS-TCAD based simulation tool

We estimate the SERs of 65-nm SOTB(Silicon on Thin BOX) and 28-nm UTBB(Ultra Thin Body and BOX) FD-SOI processes by decreasing the supply voltage. Alpha, neutron irradiation experiments and Monte-Carlo based simulations are compared in this work. The SERs can be analyzed by the simulation tool with only layout pattern of test chips. The simulation results are consistent with the alpha and neutron irradiation measurement results.