Comprehensive ‘atomistic’ simulation of statistical variability and reliability in 14 nm generation FinFETs

In this paper, by using comprehensive statistical device simulation methodology, we investigate the effect of Statistical variability and reliability on the state of the art 14nm FinFET technology on important device figures of merit. Important sources of statistical variability have been considered in all simulation of fresh devices and various degradation levels are included in the reliability simulation cases. The interplay between the initial statistical variability introduced by random discrete dopants, line edge roughness and metal gate granularity and the statistical variability introduced by different level of trapped charges resulting from BTI degradation is studied in details. Results related to the time dependent variability and the correlation of key transistor figures of merit are also presented.