Title :
RF technology optimization by a fast method for linearity determination
Author :
T. V. Dinh;A. Vohra;J. Melai;T. Vanhoucke;P. H. C. Magnee;D. B. M. Klaassen
Author_Institution :
NXP Semiconductors Leuven, Interleuvenlaan 80, 3001, Belgium
Abstract :
This paper introduces a new methodology to determine the small signal linearity of a device directly from 2-port Y-parameters. With that approach, a 10-fold reduction of the simulation time in a comparison with traditional transient or harmonic balance simulations can be achieved, which enables a fast route for RF device and process technology optimization in an industrial environment. It is also shown that the linearity performance should be taken into account for the device optimization.
Keywords :
"Linearity","Radio frequency","Harmonic analysis","Optimization","Silicon germanium","Power system harmonics","Performance evaluation"
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2015 International Conference on
Print_ISBN :
978-1-4673-7858-1
DOI :
10.1109/SISPAD.2015.7292289