DocumentCode :
3667921
Title :
RF technology optimization by a fast method for linearity determination
Author :
T. V. Dinh;A. Vohra;J. Melai;T. Vanhoucke;P. H. C. Magnee;D. B. M. Klaassen
Author_Institution :
NXP Semiconductors Leuven, Interleuvenlaan 80, 3001, Belgium
fYear :
2015
Firstpage :
182
Lastpage :
185
Abstract :
This paper introduces a new methodology to determine the small signal linearity of a device directly from 2-port Y-parameters. With that approach, a 10-fold reduction of the simulation time in a comparison with traditional transient or harmonic balance simulations can be achieved, which enables a fast route for RF device and process technology optimization in an industrial environment. It is also shown that the linearity performance should be taken into account for the device optimization.
Keywords :
"Linearity","Radio frequency","Harmonic analysis","Optimization","Silicon germanium","Power system harmonics","Performance evaluation"
Publisher :
ieee
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2015 International Conference on
ISSN :
1946-1569
Print_ISBN :
978-1-4673-7858-1
Type :
conf
DOI :
10.1109/SISPAD.2015.7292289
Filename :
7292289
Link To Document :
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