Heterojunction resonant tunneling diode at the atomic limit

In this work, we present atomically thin resonant tunnel diode, based on vertically stacked heterostructures by combining graphene with layered transition-metal dichalocogenides (TMDs) such as molybdenum disulfide (MoS₂), and tungsten diselenide (WSe₂). Density functional theory (DFT) coupled with non-equilibrium Green´s function (NEGF) transport calculation shows resonant tunnelling in heterolayer TMD and graphene (i.e. MoS₂-WSe₂-Gr) system with a prominent negative differential resistance (NDR) characteristic. However, homolayer TMD-graphene stack (i.e. bilayer WSe₂-Gr) does not show any NDR in its I-V characteristics.