Title :
Electrically doped WTe2 tunnel transistors
Author :
Hesameddin Ilatikhameneh;Rajib Rahman;Joerg Appenzeller;Gerhard Klimeck
Author_Institution :
Department of Electrical and Computer Engineering, Purdue University, West Lafayette, IN, 47907 USA
Abstract :
In this work, the performance of an electrically doped monolayer WTe2 tunnel field-effect (TFET) transistor is investigated by means of full band quantum transport simulations. The atomistic simulations predict an ON-current above 100 uA/um and a SS below 10 mV/dec for a channel length of 13nm and VDD of 0.5V. The impact of the design parameters such as oxide thickness and dielectric constant is discussed in detail.
Keywords :
"Transistors","Doping","Performance evaluation","Dielectric constant","Logic gates","Chemicals","Computational modeling"
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2015 International Conference on
Print_ISBN :
978-1-4673-7858-1
DOI :
10.1109/SISPAD.2015.7292311
