• DocumentCode
    3667947
  • Title

    A finite-element thermoelectric model for phase-change memory devices

  • Author

    Aravinthan Athmanathan;Daniel Krebs;Abu Sebastian;Manuel Le Gallo;Haralampos Pozidis;Evangelos Eleftheriou

  • Author_Institution
    IBM Research - Zurich, 8803 Rü
  • fYear
    2015
  • Firstpage
    289
  • Lastpage
    292
  • Abstract
    In this article, we present a finite-element method (FEM)-based thermo-electric model to accurately capture the characteristics of phase-change memory devices. The individual thermoelectric heating components are separated to obtain a detailed understanding of thermal transport in the device. This work is different from other exciting modeling work on thermoelectrics in that, for the first time, it compares the modeling results with experimental measurements obtained over a range of ambient temperatures, thereby validating the accuracy of the proposed model.
  • Keywords
    "Temperature measurement","Resistance heating","Programming","Phase change materials","Conductivity","Resistance","Thermal conductivity"
  • Publisher
    ieee
  • Conference_Titel
    Simulation of Semiconductor Processes and Devices (SISPAD), 2015 International Conference on
  • ISSN
    1946-1569
  • Print_ISBN
    978-1-4673-7858-1
  • Type

    conf

  • DOI
    10.1109/SISPAD.2015.7292316
  • Filename
    7292316