DocumentCode
3667947
Title
A finite-element thermoelectric model for phase-change memory devices
Author
Aravinthan Athmanathan;Daniel Krebs;Abu Sebastian;Manuel Le Gallo;Haralampos Pozidis;Evangelos Eleftheriou
Author_Institution
IBM Research - Zurich, 8803 Rü
fYear
2015
Firstpage
289
Lastpage
292
Abstract
In this article, we present a finite-element method (FEM)-based thermo-electric model to accurately capture the characteristics of phase-change memory devices. The individual thermoelectric heating components are separated to obtain a detailed understanding of thermal transport in the device. This work is different from other exciting modeling work on thermoelectrics in that, for the first time, it compares the modeling results with experimental measurements obtained over a range of ambient temperatures, thereby validating the accuracy of the proposed model.
Keywords
"Temperature measurement","Resistance heating","Programming","Phase change materials","Conductivity","Resistance","Thermal conductivity"
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices (SISPAD), 2015 International Conference on
ISSN
1946-1569
Print_ISBN
978-1-4673-7858-1
Type
conf
DOI
10.1109/SISPAD.2015.7292316
Filename
7292316
Link To Document