DocumentCode :
3667947
Title :
A finite-element thermoelectric model for phase-change memory devices
Author :
Aravinthan Athmanathan;Daniel Krebs;Abu Sebastian;Manuel Le Gallo;Haralampos Pozidis;Evangelos Eleftheriou
Author_Institution :
IBM Research - Zurich, 8803 Rü
fYear :
2015
Firstpage :
289
Lastpage :
292
Abstract :
In this article, we present a finite-element method (FEM)-based thermo-electric model to accurately capture the characteristics of phase-change memory devices. The individual thermoelectric heating components are separated to obtain a detailed understanding of thermal transport in the device. This work is different from other exciting modeling work on thermoelectrics in that, for the first time, it compares the modeling results with experimental measurements obtained over a range of ambient temperatures, thereby validating the accuracy of the proposed model.
Keywords :
"Temperature measurement","Resistance heating","Programming","Phase change materials","Conductivity","Resistance","Thermal conductivity"
Publisher :
ieee
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2015 International Conference on
ISSN :
1946-1569
Print_ISBN :
978-1-4673-7858-1
Type :
conf
DOI :
10.1109/SISPAD.2015.7292316
Filename :
7292316
Link To Document :
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