The role of the interface reactions in the electroforming of redox-based resistive switching devices using KMC simulations

In this paper we apply a physical model based on kinetic Monte Carlo (KMC) simulations to investigate the electroforming process of ReRAMs. In this model the electric current through the oxide is assisted by oxygen vacancies which are generated at the anode-oxide interface and introduced into the oxide. The major driving forces that control these processes are the electric field, temperature and temperature gradient. Transient simulation on short timescales was done to obtain the forming time as a function of the voltage pulse amplitude.