Physical simulation of dynamic resistive switching in metal oxides using a Schottky contact barrier model

We present a numerical drift-diffusion model of electronic-ionic transport combined with a Schottky contact barrier model to study resistive switching phenomena in ReRAM devices. Capturing the transition between Schottky and ohmic contact resistances upon temperature-accelerated ion migration, our model correctly describes the quasi-static I-V switching characteristics as well as dynamic set and reset events. It is shown to account for a transition between bipolar resistive switching and complementary switching when reducing the asymmetry between the contact barriers. Further, it is used to characterize the abrupt and gradual behavior of the set and the reset process, respectively.