Impact of backplane configuration on the statistical variability in 22nm FDSOI CMOS

In this paper, using variation aware device simulation, we study the local device variability and mismatch as affected by statistical variation resulting from differing backplane doping options in fully depleted SOI transistors. It is seen that discrete random doping effects associated with the choice of doping has a direct effect on mismatch, resulting in increased mismatch with larger channel doping. However, it is also seen that increased backplane doping may counter intuitively help to reduce the variability associated with discrete doping due modification of the electrostatic screening of the source/drain extensions.