Electrical characteristic of InGaAs multiple-gate MOSFET devices

In this work, we study the impact of channel fin width (W_fin) and fin height (H_fin) on III-V multiple-gate metal-oxide-semiconductor field-effect transistors (MOSFETs). We numerically simulated the output and transfer characteristics and the short-channel effect (SCE) of 14-nm InGaAs triple-gate MOSFETs by using an experimentally validated simulation. The engineering findings of this study indicate that devices with W_fin = 10 nm and H_fin between 14 and 21 nm possess optimal characteristic owing to a tradeoff between the drain-induced barrier lowing and subthreshld property. The effects of channel resistance, effective width, and quantum confinement resulting from the H_fin-dependent small energy band gap channel film on device characteristic are further estimated and discussed.