DocumentCode :
3667970
Title :
Physical simulation of Si-based resistive random-access memory devices
Author :
Toufik Sadi;Liping Wang;Louis Gerrer;Asen Asenov
Author_Institution :
School of Engineering, University of Glasgow, G12 8LT, U.K.
fYear :
2015
Firstpage :
385
Lastpage :
388
Abstract :
We present a newly-developed three-dimensional (3D) physical simulator suitable for the study of resistive random-access memory (RRAM) devices. We explore the switching behavior of Si-rich silica (SiOx) RRAM structures, whose operation has been successfully demonstrated experimentally at ambient conditions [1]. The simulator couples self-consistently a simulation of oxygen ion and electron transport to a self-heating model and the `atomistic´ simulator GARAND. The electro-thermal simulation model provides many advantages compared to the classical phenomenological models based on the resistor breaker network. The simulator is validated with respect to experimental data and captures successfully the memristive behavior of the simulated SiOx RRAMs, by reconstructing the conductive filament formation and destruction phenomena in the 3D space. The simulation framework is useful for exploring the little-known physics of SiOx RRAMs, and providing efficient designs, in terms of performance, variability and reliability, for both memory devices and circuits.
Keywords :
"Switches","Silicon","Resistance","Three-dimensional displays","Memristors","Electric fields","Substrates"
Publisher :
ieee
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2015 International Conference on
ISSN :
1946-1569
Print_ISBN :
978-1-4673-7858-1
Type :
conf
DOI :
10.1109/SISPAD.2015.7292340
Filename :
7292340
Link To Document :
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