DocumentCode
3667982
Title
Intrinsic and extrinsic stability of Ovonic-switching devices
Author
F. Buscemi;E. Piccinini;R. Brunetti;M. Rudan
Author_Institution
Department of Physics, Informatics, and Mathematics, University of Modena and Reggio Emilia, Via Campi 213/A, I-41125, Italy
fYear
2015
Firstpage
429
Lastpage
432
Abstract
The time evolution of current and voltage in Ovonic-switching devices is affected, on one side, by parasitic elements due to contacts and connectors and, on the other one, by the internal-relaxation mechanisms of the material itself. The two aspects, respectively termed here “extrinsic” and “intrinsic” dynamics, are investigated in this paper on the basis of the time-dependent, trap-limited conduction model proposed by the authors for investigating this type of devices.
Keywords
"Switches","Mathematical model","Current density","Phase change memory","Transient analysis","Oscillators","Electron devices"
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices (SISPAD), 2015 International Conference on
ISSN
1946-1569
Print_ISBN
978-1-4673-7858-1
Type
conf
DOI
10.1109/SISPAD.2015.7292352
Filename
7292352
Link To Document