• DocumentCode
    3667982
  • Title

    Intrinsic and extrinsic stability of Ovonic-switching devices

  • Author

    F. Buscemi;E. Piccinini;R. Brunetti;M. Rudan

  • Author_Institution
    Department of Physics, Informatics, and Mathematics, University of Modena and Reggio Emilia, Via Campi 213/A, I-41125, Italy
  • fYear
    2015
  • Firstpage
    429
  • Lastpage
    432
  • Abstract
    The time evolution of current and voltage in Ovonic-switching devices is affected, on one side, by parasitic elements due to contacts and connectors and, on the other one, by the internal-relaxation mechanisms of the material itself. The two aspects, respectively termed here “extrinsic” and “intrinsic” dynamics, are investigated in this paper on the basis of the time-dependent, trap-limited conduction model proposed by the authors for investigating this type of devices.
  • Keywords
    "Switches","Mathematical model","Current density","Phase change memory","Transient analysis","Oscillators","Electron devices"
  • Publisher
    ieee
  • Conference_Titel
    Simulation of Semiconductor Processes and Devices (SISPAD), 2015 International Conference on
  • ISSN
    1946-1569
  • Print_ISBN
    978-1-4673-7858-1
  • Type

    conf

  • DOI
    10.1109/SISPAD.2015.7292352
  • Filename
    7292352