Title :
Transient 3-D TCAD simulation of multiple snapback event in mixed-mode test for mutual relation between protection devices
Author :
Hyoungcheol Kwon;Yoonsung Lee;Sangyong Kim;Manho Seung;Changyeol Lee;Seokkiu Lee;Sungjoo Hong
Author_Institution :
Research and Development Division, SK Hynix Semiconductor Inc., Icheon, South Korea
Abstract :
Mutual ESD behavior dependency between multiple devices under Transmission Line Pulse stress was investigated using transient 3-D TCAD simulation. Interestingly, the transient response of drain voltage has multiple snapback profiles in the mixed-mode test. When one of the devices in the mixed-mode test is turned on, the current waveform of the other adjacent devices shows snapback profile. This mutual relation between protection devices affects the ESD robustness. If there is a big imbalance of individual ESD characteristics between the devices under the mixed-mode test, the lattice temperature hot-spot and failure may occurs in the device even though the robustness of the other connected device is lower than that of the device in the single-device test.
Keywords :
"Electrostatic discharges","Lattices","Robustness","Transient analysis","Stress","Integrated circuit modeling","Solid modeling"
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2015 International Conference on
Print_ISBN :
978-1-4673-7858-1
DOI :
10.1109/SISPAD.2015.7292363