• DocumentCode
    3668404
  • Title

    Bipolar Monte Carlo simulation of hot carriers in III-N LEDs

  • Author

    Pyry Kivisaari;Toufik Sadi;Jingrui Li;Jani Oksanen;Patrick Rinke;Jukka Tulkki

  • Author_Institution
    Nanometer Structure Consortium, Lund University, P.O. Box 118, SE-22100 Lund, Sweden
  • fYear
    2015
  • Firstpage
    11
  • Lastpage
    12
  • Abstract
    We perform fully bipolar ´Carlo simulations of electrons and holes in III-Nitride multi-quantum well light-emitting diodes (LEDs) to investigate the effects of hot carriers. Our results show how accounting for hot carriers affects the current-voltage characteristics and device efficiency. We also discuss the effects of bandstructure details on the simulation results. Further simulations with versatile QW and EBL configurations are needed to confirm the relationship between hot carrier effects and current-voltage characteristics.
  • Keywords
    "Light emitting diodes","Charge carrier processes","Monte Carlo methods","Gallium nitride","Scattering","Hot carrier effects"
  • Publisher
    ieee
  • Conference_Titel
    Numerical Simulation of Optoelectronic Devices (NUSOD), 2015 International Conference on
  • ISSN
    2158-3234
  • Print_ISBN
    978-1-4799-8378-0
  • Type

    conf

  • DOI
    10.1109/NUSOD.2015.7292797
  • Filename
    7292797
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3668404