DocumentCode :
3668404
Title :
Bipolar Monte Carlo simulation of hot carriers in III-N LEDs
Author :
Pyry Kivisaari;Toufik Sadi;Jingrui Li;Jani Oksanen;Patrick Rinke;Jukka Tulkki
Author_Institution :
Nanometer Structure Consortium, Lund University, P.O. Box 118, SE-22100 Lund, Sweden
fYear :
2015
Firstpage :
11
Lastpage :
12
Abstract :
We perform fully bipolar ´Carlo simulations of electrons and holes in III-Nitride multi-quantum well light-emitting diodes (LEDs) to investigate the effects of hot carriers. Our results show how accounting for hot carriers affects the current-voltage characteristics and device efficiency. We also discuss the effects of bandstructure details on the simulation results. Further simulations with versatile QW and EBL configurations are needed to confirm the relationship between hot carrier effects and current-voltage characteristics.
Keywords :
"Light emitting diodes","Charge carrier processes","Monte Carlo methods","Gallium nitride","Scattering","Hot carrier effects"
Publisher :
ieee
Conference_Titel :
Numerical Simulation of Optoelectronic Devices (NUSOD), 2015 International Conference on
ISSN :
2158-3234
Print_ISBN :
978-1-4799-8378-0
Type :
conf
DOI :
10.1109/NUSOD.2015.7292797
Filename :
7292797
Link To Document :
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