Title :
Greatly improved efficiency droop for InGaN-based green light emitting diodes by quaternary content superlattice electron blocking layer
Author :
Da-Wei Lin;An-Jye Tzou;Jhih-Kai Huang;Bing-Cheng Lin;Chun-Yen Chang;Hao-Chung Kuo
Author_Institution :
Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan
Abstract :
We presented a low efficiency droop behavior green light emitting diodes (LEDs) with a quaternary content InAlGaN/GaN superlattice electron blocking layer (SL-EBL). The light output power shows a 57% enhancement and only 30% efficiency droop, which is attributed to a smooth band bending with a uniform carrier distribution.
Keywords :
"Light emitting diodes","Gallium nitride","Charge carrier processes","Electrostatics","Power generation","Superlattices","Brightness"
Conference_Titel :
Numerical Simulation of Optoelectronic Devices (NUSOD), 2015 International Conference on
Print_ISBN :
978-1-4799-8378-0
DOI :
10.1109/NUSOD.2015.7292799
