• DocumentCode
    3668406
  • Title

    Greatly improved efficiency droop for InGaN-based green light emitting diodes by quaternary content superlattice electron blocking layer

  • Author

    Da-Wei Lin;An-Jye Tzou;Jhih-Kai Huang;Bing-Cheng Lin;Chun-Yen Chang;Hao-Chung Kuo

  • Author_Institution
    Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan
  • fYear
    2015
  • Firstpage
    15
  • Lastpage
    16
  • Abstract
    We presented a low efficiency droop behavior green light emitting diodes (LEDs) with a quaternary content InAlGaN/GaN superlattice electron blocking layer (SL-EBL). The light output power shows a 57% enhancement and only 30% efficiency droop, which is attributed to a smooth band bending with a uniform carrier distribution.
  • Keywords
    "Light emitting diodes","Gallium nitride","Charge carrier processes","Electrostatics","Power generation","Superlattices","Brightness"
  • Publisher
    ieee
  • Conference_Titel
    Numerical Simulation of Optoelectronic Devices (NUSOD), 2015 International Conference on
  • ISSN
    2158-3234
  • Print_ISBN
    978-1-4799-8378-0
  • Type

    conf

  • DOI
    10.1109/NUSOD.2015.7292799
  • Filename
    7292799
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3668406