Title :
Opto-electrical characteristics of Si-based blocked-impurity-band detector: Experiment and simulation
Author :
Xiaodong Wang;Bingbing Wang;Liwei Hou;Wei Xie;Xiaoyao Chen;Ming Pan
Author_Institution :
No. 50 Research Institute of China Electronics Technology Group Corporation, 318 Chang He Road, Shanghai, China 200331
Abstract :
Opto-electrical characteristics of Si-based blocked-impurity-band (BIB) detector are investigated by combing experiment with simulation. The measured black-body response characteristics at different temperature are discussed. The simulated dark current characteristics with different thicknesses of blocking layer are also presented by taking into account impurity-band effects.
Keywords :
"Detectors","Anodes","Dark current","Temperature measurement","Impurities","Temperature","Silicon"
Conference_Titel :
Numerical Simulation of Optoelectronic Devices (NUSOD), 2015 International Conference on
Print_ISBN :
978-1-4799-8378-0
DOI :
10.1109/NUSOD.2015.7292801
