DocumentCode
3668409
Title
Electronic properties of polar and semi-polar dot-in-a-well heterostructures
Author
Stefan Schulz;Oliver Marquardt
Author_Institution
Tyndall National Institute, Lee Maltings, Cork, Ireland
fYear
2015
Firstpage
21
Lastpage
22
Abstract
We use a symmetry-adapted formalism to compute the elastic, piezoelectric, and electronic properties of polar and semi-polar dot-in-a-well (DWELL) systems. Our simulations reveal a reduced spatial separation of electron and hole ground state wave functions in semi-polar DWELL systems compared to their polar counterparts. This originates in part from the strongly reduced built-in potentials and in part from changes in the built-in potential profile. Our findings thus indicate superior recombination rates of semi-polar DWELLs, making these systems highly promising for future optoelectronic devices.
Keywords
"Charge carrier processes","Oscillators","Stationary state","Wave functions","Substrates","Electric potential","Gallium nitride"
Publisher
ieee
Conference_Titel
Numerical Simulation of Optoelectronic Devices (NUSOD), 2015 International Conference on
ISSN
2158-3234
Print_ISBN
978-1-4799-8378-0
Type
conf
DOI
10.1109/NUSOD.2015.7292802
Filename
7292802
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