• DocumentCode
    3668412
  • Title

    Designing of p-AlxGa1−xN/AlyGa1−yN super lattice structure as the p-contact and transparent layer in AlGaN UVLEDs

  • Author

    Xinhui Chen;Yuh-Renn Wu

  • Author_Institution
    Graduate Institute of Photonics and Optoelectronics and Department of Electrical Engineering, National Taiwan University, Taipei 10617, Taiwan
  • fYear
    2015
  • Firstpage
    27
  • Lastpage
    28
  • Abstract
    A series of the p-AlxGa1-xN/AlyGa1-yN super lattice structure has been examined as the p-contact and transparent layer for different ultra-violet light emitting diode (UVLED) with a self-consistent 1D Poisson and Schrödinger solver. The optimized condition for different UV wavelength has been found for UVLED for 223 nm to 355 nm. By calculating the absorption coefficient of the SL structure, we confirmed that the proper SL structure has the enormous potential of being used in AlGaN UVLEDs.
  • Keywords
    "Aluminum gallium nitride","Wide band gap semiconductors","Absorption","Photonic band gap","Photonics","Light emitting diodes"
  • Publisher
    ieee
  • Conference_Titel
    Numerical Simulation of Optoelectronic Devices (NUSOD), 2015 International Conference on
  • ISSN
    2158-3234
  • Print_ISBN
    978-1-4799-8378-0
  • Type

    conf

  • DOI
    10.1109/NUSOD.2015.7292805
  • Filename
    7292805
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3668412