Effect of V-shaped pit density on quantum efficiency of blue InGaN/GaN multiple-quantum well light-emitting diodes: Simulation

LEDs with different density of V-shaped pits are numerically investigated. To validate the used models and parameters, the experimentally external quantum efficiency (EQE) curve of blue InGaN/GaN multiple quantum well light-emitting diode (LED) is fitted with the calculated EQE curve. Simulation results show that the EQE is firstly enhanced and then reduced with an increase in the density of pits. The optimal value of the density is about 2.5e9 cm^-2.