• DocumentCode
    3668439
  • Title

    Resonant tunneling effect of InAs quantum dots grown on InAlAs/InP

  • Author

    B. Zhang;W. G. Ning;F. M. Guo

  • Author_Institution
    Shanghai Key Laboratory of Multidimensional Information Processing, Key Laboratory of Polar Materials &
  • fYear
    2015
  • Firstpage
    85
  • Lastpage
    86
  • Abstract
    InAs quantum dots grown on InAlAs/InP were discussed by Lumerical software in this paper. By discussing current-voltage characteristics curve (I-V) and capacity-voltage characteristics curve (C-V), we founded that resonant tunneling effect of InAs QDs and barrier of InP and InAlAs result in the asymmetry of I-V.
  • Keywords
    "Indium phosphide","III-V semiconductor materials","Indium compounds","Resonant tunneling devices","Capacitance-voltage characteristics","Current measurement","Energy states"
  • Publisher
    ieee
  • Conference_Titel
    Numerical Simulation of Optoelectronic Devices (NUSOD), 2015 International Conference on
  • ISSN
    2158-3234
  • Print_ISBN
    978-1-4799-8378-0
  • Type

    conf

  • DOI
    10.1109/NUSOD.2015.7292834
  • Filename
    7292834
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3668439