Title :
Simulation of InAlAs/InGaAs/InAs quantum dots — Quantum well near-infrared detector
Author :
W. W. Wang;F. M. Guo
Author_Institution :
Shanghai Key Laboratory of Multidimensional Information Processing, Key Laboratory of Polar Materials &
Abstract :
We systematically have studied the InAlAs/InGaAs/InAs quantum dots - quantum well with InP substrate by simulating and analyzed with Crosslight Apsys package. The S (signal)/D (dark current) has best working points at 3.5V and -1.3V at 300K and photocurrent spectrum based on quantum dot in well can tail up to 1.70μm. Simulation result still included InGaAs EL spectrum, dark current and photo-responsivity.
Keywords :
"Quantum dots","Photoconductivity","Indium gallium arsenide","Signal to noise ratio","Atmospheric modeling","Resonant tunneling devices"
Conference_Titel :
Numerical Simulation of Optoelectronic Devices (NUSOD), 2015 International Conference on
Print_ISBN :
978-1-4799-8378-0
DOI :
10.1109/NUSOD.2015.7292842
