Impact of individual dopants on the electronic properties of axial InxGa1−xN/GaN nanowire heterostructures

We investigate the impact of individual ionized donors on the electronic properties of axial In_xGa_1-xN/GaN nanowire heterostructures. Our simulations indicate a strong impact of the electrostatic potential arising from ionized donors on the charge carrier confinement. A statistical analysis of nanowires containing randomly distributed donors reveals a large wire-to-wire variation of transition energies and electron-hole overlap, which contributes to a broadening of the emission lines in ensembles of axial In_xGa_1-xN/GaN nanowire heterostructures. Additionally, we systematically study the influence of a single donor in the vicinity of the active In_xGa_1-xN layer and discuss the impact of the donor for different In contents x.