DocumentCode :
3668455
Title :
Diffusion-driven current transport to near-surface nanostructures
Author :
Pyry Kivisaari;Lauri Riuttanen;Sami Suihkonen;Jani Oksanen
Author_Institution :
Nanometer Structure Consortium, Lund University, P.O. Box 118, SE-22100 Lund, Sweden
fYear :
2015
Firstpage :
117
Lastpage :
118
Abstract :
Diffusion-driven current transport (DDCT) has recently been proposed as a new way to organize the current injection in nanoscale optoelectronic devices. The very recent first proof-of-principle experiments have also shown that DDCT works as predicted theoretically. In this work we perform simulations on DDCT-based III-Nitride devices and demonstrate how the optimization of DDCT differs significantly from the optimization of conventional double heterostructure based devices.
Keywords :
"Doping","Gallium nitride","Electric potential","Charge carrier processes","Optimization","Semiconductor process modeling","Nanostructures"
Publisher :
ieee
Conference_Titel :
Numerical Simulation of Optoelectronic Devices (NUSOD), 2015 International Conference on
ISSN :
2158-3234
Print_ISBN :
978-1-4799-8378-0
Type :
conf
DOI :
10.1109/NUSOD.2015.7292850
Filename :
7292850
Link To Document :
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