On device concepts for CMOS-compatible edge-emitters based on strained germanium

We consider a device concept for edge-emitting lasers based on strained germanium (Ge) microstrips. The special SiN stressor design induces an inhomogeneous (tensile) strain distribution and requires lateral current injection. Microscopic calculations of the material gain for strained Ge enter our two-dimensional simulation of the carrier transport and of the optical field within a cross section of the device orthogonal to the optical cavity. We study the optoelectronic properties of the device concept for two different carrier injection schemes.