Measured and 3D modelled quantum efficiency of an oxide-charge induced junction photodiode at room temperature

Quantum deficiencies of charge induced junction photodiodes have been experimentally measured and 3D simulated. It is found that the internal quantum deficiency (IQD) is mainly limited by the surface quality at low optical power. With an achievable good surface, the simulations predicts an IQD below 10ppm or, equivalently, an internal quantum efficiency higher than 99.999% when the photodiodes are operated at room temperature.