DocumentCode :
3668486
Title :
Boundary conditions in characterizing InxGa1−xAs /GaAs quantum well infrared photodetector
Author :
X. Tong;N. Lan;X. Q. Lu;D. Y. Xiong
Author_Institution :
Shanghai Key Laboratory of Multidimensional Information Processing, East China Normal University, Shanghai 200241, China
fYear :
2015
Firstpage :
181
Lastpage :
182
Abstract :
We study the optical transition between bound-to-continuum states in InGaAs/GaAs quantum well infrared photodetector (QWIP) by analyzing two possible boundary conditions for the continuum states. InGaAs/GaAs QWIP differs from the GaAs/AlGaAs QWIP in many aspects. Comparing running wave function and Bloch wave function with experimental results, we find that Bloch wave function is the much more suitable boundary condition for multiple InGaAs/GaAs quantum well (QW) structure. The blueshift of the responding peak is smaller when the Bloch wave boundary conditions apply.
Keywords :
"Gallium arsenide","Indium gallium arsenide","Boundary conditions","Photodetectors","Wave functions","Photoconductivity","Quantum dots"
Publisher :
ieee
Conference_Titel :
Numerical Simulation of Optoelectronic Devices (NUSOD), 2015 International Conference on
ISSN :
2158-3234
Print_ISBN :
978-1-4799-8378-0
Type :
conf
DOI :
10.1109/NUSOD.2015.7292882
Filename :
7292882
Link To Document :
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