DocumentCode :
3668714
Title :
Critical electric field and self-heating in 3D SiC/Si MOSFETs
Author :
Vamshi Veesam;Ramana Thakkallapally;Ibrahim Abdel-Motaleb;Zheng Shen
Author_Institution :
Department of Electrical Engineering, Northern Illinois University, DeKalb Illinois 60115
fYear :
2015
fDate :
5/1/2015 12:00:00 AM
Firstpage :
684
Lastpage :
687
Abstract :
In this paper we evaluated the electric field and self-heating temperature of 3D 3C-SiC/Si MOSFETs. Using the numerical analysis simulator Silvaco Atlas, this device was found to have a critical electric field of 6.68×106 V/cm at a breakdown voltage close to 312V. Using COMSOL program, self-heating effect was investigated, and found that the temperature reached 866K at VDS=312V and VGS=5V.
Keywords :
"Silicon carbide","Electric fields","MOSFET","Silicon","Logic gates","Substrates","Metals"
Publisher :
ieee
Conference_Titel :
Electro/Information Technology (EIT), 2015 IEEE International Conference on
Electronic_ISBN :
2154-0373
Type :
conf
DOI :
10.1109/EIT.2015.7293417
Filename :
7293417
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3668714
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