DocumentCode :
3670048
Title :
Acceleration of hydrophobicity transfer rate of contaminated HTV silicone rubber by plasma jet
Author :
Ruobing Zhang;Xinlei Zhou;Yan Xia;Hui Liu;Qinghe Shen
Author_Institution :
Graduate School at Shenzhen, Tsinghua University, Laboratory of Advanced Technology of Electrical Engineering and Energy, China
fYear :
2015
fDate :
7/1/2015 12:00:00 AM
Firstpage :
756
Lastpage :
759
Abstract :
Silicone rubber, as the important material of composite insulator, has been widely used in the electrical power system due to its excellent hydrophobicity transfer performance. It is of great significance to find an effective method to improve the hydrophobicity of severely contaminated HTV silicone rubber when it lose its natural hydrophobicity transfer performance. This paper found that treatment of the atmospheric pressure plasma jet using dielectric barrier discharge method could promote the hydrophobicity transfer rate of the contaminated HTV silicone rubber when it was heavily contaminated. Factors such as processing time and transfer time have a significant effect on the treatment effect. It was shown that the hydrophobicity recovery rate increased with the increase of the processing time. After long time transfer, the improved hydrophobicity of the contaminated HTV surface would not disappear. Contaminated composite insulator slices were treated by the high-power plasma jet device and the hydrophobicity of the slices was obviously improved in a short processing time (2 to 8 seconds) as well. Scanning electron microscopy (SEM) of the HTV surface proved that it was the active species of the plasma jet that promoted the hydrophobic molecules to transfer to the pollution surface by reacting with the HTV material.
Keywords :
"Plasmas","Rubber","Surface contamination","Surface treatment","Scanning electron microscopy","Pollution"
Publisher :
ieee
Conference_Titel :
Properties and Applications of Dielectric Materials (ICPADM), 2015 IEEE 11th International Conference on the
Electronic_ISBN :
2160-9241
Type :
conf
DOI :
10.1109/ICPADM.2015.7295382
Filename :
7295382
Link To Document :
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