DocumentCode :
3670091
Title :
Physical damage effect of microelectrodes under nanosecond pulse induced breakdown
Author :
Guodong Meng;Yonghong Cheng;Chengye Dong;Lei Chen;Chuang Men
Author_Institution :
State Key Lab. of Electrical Insulation and Power Equipment, Xi´an Jiaotong University, 28 Xianning West Road, Shaanxi 710049, China
fYear :
2015
fDate :
7/1/2015 12:00:00 AM
Firstpage :
927
Lastpage :
930
Abstract :
Electrical breakdown due to overvoltage may result in a series of performance degradation and physical damage to microelectronic devices. In this paper, we present the physical damage effect of nanogaps in microelectronic devices and explore the relationship between the morphology change and injected energy during breakdown process. The nanoscale discharge characteristics experimental system based on a focused ion beam, a nanometer manipulator and a DC power supply generator was established, which could be used to simulate the typical nanosecond pulse impact event while electrostatic charge accumulates between the nanogaps. Different types of voltage stresses were applied to tungsten microelectrodes so as to understand the relationship between physical morphology change and injected energy. The morphology change process was obtained and the mechanism for the multi-physical coupling induced physical damage was then put forward.
Keywords :
"Morphology","Electrodes","Surface morphology","Nanoscale devices","Discharges (electric)","Vacuum breakdown"
Publisher :
ieee
Conference_Titel :
Properties and Applications of Dielectric Materials (ICPADM), 2015 IEEE 11th International Conference on the
Electronic_ISBN :
2160-9241
Type :
conf
DOI :
10.1109/ICPADM.2015.7295425
Filename :
7295425
Link To Document :
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