Short course overview: Low voltage GaN power switch modules for increased energy efficiency

Silicon Carbide (SiC) and Gallium Nitride (GaN) power devices promise significant energy and cost savings for power electronics converters than feasible with silicon power devices. Low-voltage GaN power diodes and HEMTs rated up to 650V volts are now commercially available; and GaN power devices rated up to 3.5kV are expected soon. This half-day short course will present the physics, technology, application engineering of low-voltage (<; 650V) GaN power switch modules for increased energy efficiency in a wide range of DC-DC power converter applications including computing, communication, transportation, and renewable energy integration. The design and performance of GaN power switch modules for prototype point-of-load (POL) DC-DC power converters will be discussed and tradeoffs in performance vs. cost will be critically assessed.