Integrated gate drivers for e-mode very high power GaN transistors

Lateral GaN transistors that have on-chip drivers are being introduced. These are high current - 100 A/650 V devices that use redundancy techniques to achieve high yields. It is the lateral nature of these devices that enables both the driver and the redundancy circuitry to be provided. On-chip drive circuitry is beneficial because these e-mode GaN transistors can then be rapidly driven to provide synchronous low loss reverse conduction. This paper describes the required drive circuitry.