• DocumentCode
    3670354
  • Title

    Development of medium voltage SiC power technology for next generation power electronics

  • Author

    Edward Van Brunt;David Grider;Vipindas Pala;Sei-Hyung Ryu;Jeff Casady;John Palmour

  • Author_Institution
    Cree, Inc., Durham, NC, USA, 27703
  • fYear
    2015
  • fDate
    5/1/2015 12:00:00 AM
  • Firstpage
    72
  • Lastpage
    74
  • Abstract
    Recent developments in 3.3 kV to 15 kV 4H-SiC MOSFETs are discussed, and device merits are compared to traditional Silicon IGBT technology, as well as 15 kV SiC n-IGBTs. Performance near theoretical limits was achieved for the 4H-SiC MOSFETs; bipolar 4H-SiC devices were analyzed and were found to handle higher currents at low frequencies.
  • Keywords
    "MOSFET","Silicon carbide","Switching frequency","Insulated gate bipolar transistors","Silicon","Performance evaluation","Switches"
  • Publisher
    ieee
  • Conference_Titel
    Integrated Power Packaging (IWIPP), 2015 IEEE International Workshop on
  • Type

    conf

  • DOI
    10.1109/IWIPP.2015.7295981
  • Filename
    7295981
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3670354