DocumentCode :
3670962
Title :
Influences on pulsed-current transporting properties of semiconductor switch by its consumed energy and thermal characters
Author :
K. Huang;Z. Dong;R. Ren;H. Zhang;W. Zhou
Author_Institution :
Northwest Institute of Mechanical and Electrical Engineering, XianYang, China
fYear :
2015
fDate :
5/1/2015 12:00:00 AM
Firstpage :
1
Lastpage :
5
Abstract :
The pulsed power supply provides single or repeated frequency pulse energy for the load and needs the high-power switches to realize the control function. For the advantages of high reliability and small resistance, the semiconductor switch has been widely used in the pulsed power systems. The through-flow capability is an important technical parameter of the semiconductor switch, and is also the basic parameter on designing the pulse power systems. Through theoretical analysis a fast algorithm for estimating the semiconductor switch through-flow capability was deduced by applying the 10ms surge index of the device in this paper. To prove the feasibility of the method, a thyristor in an electromagnetism launching system was tested with this algorithm, and its flow-through capacity is compared with the results from forester´s model. Results show that this method provided a fast and concise model.
Keywords :
"Switches","Junctions","Thyristors","Resistance","Mathematical model","Temperature measurement","Semiconductor device modeling"
Publisher :
ieee
Conference_Titel :
Pulsed Power Conference (PPC), 2015 IEEE
ISSN :
2158-4915
Electronic_ISBN :
2158-4923
Type :
conf
DOI :
10.1109/PPC.2015.7296858
Filename :
7296858
Link To Document :
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