Study of fast rise time pulse power generator using SiC-MOSFET and FRD

There are various methods of pulsed power generation using semiconductor switch. Semiconductor switching device is indispensable to realize a high repetitive operation of the pulsed power modulator. High repetitive operation of the modulator have contributed to industrial application of pulsed power, but the semiconductor switching device wasn´t able to generate fast rising pulse and high voltage directly. In this study, we have tried to use fast recovery diode for pulse compression system. Primary switching device were using Silicon-Carbide based Metal Oxide Semiconductor Field Effect Transistor (SiC-MOSFET), the pulse compression circuit was using Saturable Transformer (ST) and a Fast Recovery Diode (FRD). The switching loss has decreased by using SiC-MOSFET. We have adjusted the saturation timing of the ST for applied reverse current to FRD. We have realized generating a fast rising high voltage pulse using fast recovery characteristics of the diode. The development modulator can be obtained an output voltage of 77kV with 18.7ns voltage rise time.