DocumentCode
3671047
Title
Analysis of carrier lifetime effects on HV SIC PiN diodes at elevated pulsed switching conditions
Author
Aderinto A. Ogunniyi;Heather K. O´Brien;Miguel Hinojosa;Lin Cheng;Charles J. Scozzie;Bejoy N. Pushpakaran;Shelby Lacouture;Stephen B. Bayne
Author_Institution
Res. Lab., U.S. Army, Adelphi, MD, USA
fYear
2015
fDate
5/1/2015 12:00:00 AM
Firstpage
1
Lastpage
6
Abstract
Future Army power systems will require utilizing high-power and high-voltage SiC devices in order to meet size, weight, volume, and high power density for fast switching requirements at both component and system levels. This paper presents the modeling and simulation of a high voltage (>12kV) silicon carbide PiN diode for high action pulsed power applications. A model of a high power PiN diode was developed in the Silvaco Atlas software to better understand the extreme electrical stresses in the power diode when subjected to a high-current pulse. The impact of carrier lifetime on pulsed switching performance of silicon carbide (SiC) PiN diode was investigated.
Keywords
"Silicon carbide","PIN photodiodes","Numerical models","Charge carrier lifetime","Temperature dependence","Semiconductor process modeling","Conductivity"
Publisher
ieee
Conference_Titel
Pulsed Power Conference (PPC), 2015 IEEE
ISSN
2158-4915
Electronic_ISBN
2158-4923
Type
conf
DOI
10.1109/PPC.2015.7296946
Filename
7296946
Link To Document