DocumentCode
3671954
Title
CMOS-compatible spintronic devices
Author
Viktor Sverdlov;Joydeep Ghosh;Alexander Makarov;Thomas Windbacher;Siegfried Selberherr
Author_Institution
Institute for Microelectronics, Technische Universitä
fYear
2015
Firstpage
1
Lastpage
4
Abstract
Silicon is perfectly suited for spin-driven applications. Recent progress and challenges regarding CMOS-compatible spin-based devices are reviewed. A realization of an intrinsic non-volatile logic-in-memory architecture in an MRAM array is demonstrated.
Keywords
"Magnetic tunneling","Silicon","Switches","Current measurement"
Publisher
ieee
Conference_Titel
Microelectronics Technology and Devices (SBMicro), 2015 30th Symposium on
Type
conf
DOI
10.1109/SBMicro.2015.7298103
Filename
7298103
Link To Document