Reliability of film thickness extraction through CV curves of SOI p-i-n gated diodes

This work aims to study the reliability of the Si film thickness extraction method based on the capacitance derivative analysis in p-i-n gated diodes. Results provided by the derivative procedure are compared to the basic capacitance method (without the derivative). The basic method yields accurate Si-film thicknesses, but it can only be applied to relatively thick body devices where the supercoupling effect does not occur. On the other hand, the use of the derivative analysis is feasible and effective in ultrathin devices. This makes the derivative procedure more suitable for the characterization of the body thickness in advanced FDSOI MOS-like devices.