• DocumentCode
    3672001
  • Title

    Engineering of the photoluminescence of ZnO nanowires by different growth and annealing environments

  • Author

    A.L.F. Cauduro;C.I. L. Sombrio;P.L. Franzen;H.I. Boudinov;D.L. Baptista

  • Author_Institution
    NanoSYD, Mads Clausen Institute, University of Southern Denmark, Alsion 2, Sø
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    5
  • Abstract
    Optical properties of ZnO nanowires were investigated through photoluminescence (PL) at room and low temperatures. An excitonic structure was observed in the UV band emission and we are able to distinguish between free excitons, bound excitons and donor acceptor pairs. The PL spectra shows deep level emissions ranging from 1.4 eV up to 2.8 eV, strongly depending on surface defects whereas the red emission (1.7 eV) is activated at cryogenic temperatures. We attribute the green luminescence (2.4 eV) emission to the presence of zinc vacancies into ZnO nanowires. Further evidences that confirm the mechanism are observed in the PL emission spectra after annealing in O2 or Ar environments.
  • Keywords
    "Annealing","Integrated optics","Optical films","Optical imaging","Zinc oxide","II-VI semiconductor materials","Charge coupled devices"
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics Technology and Devices (SBMicro), 2015 30th Symposium on
  • Type

    conf

  • DOI
    10.1109/SBMicro.2015.7298151
  • Filename
    7298151
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3672001