DocumentCode
3672004
Title
New hybrid structures based on CdSe/ZnS quantum dots and multilayer graphene for photonics applications
Author
A.V. Alaferdov;R. Savu;S. Rackauskas;T. Rackauskas;M.A. Canesqui;Yu.A. Gromova;A.O. Orlova;A.V. Baranov;A.V. Fedorov;S.A. Moshkalev
Author_Institution
Center for Semiconductor Components, UNICAMP - Campinas, SP, Brazil
fYear
2015
Firstpage
1
Lastpage
4
Abstract
Fabrication of novel micron-scale structures based on multi-layer graphene and quantum dots (QD) hybrids is presented. Two types of CdSe/ZnS (core/shell) QDs with diameters of 5.3 and 2.5 nm and photoluminescence peaks at 630 and 530 nm, respectively, were used. The photoresponse for illumination by a 473 nm wavelength laser was found to change polarity for these two types of QDs, being positive for larger and negative to smaller ones. The presented photo-resistive devices can be used for studies of the mechanisms responsible for photoinduced change of graphene layer conductivity in presence of QDs.
Keywords
"Graphene","II-VI semiconductor materials","Cadmium compounds","Standards","Suspensions","Zinc compounds"
Publisher
ieee
Conference_Titel
Microelectronics Technology and Devices (SBMicro), 2015 30th Symposium on
Type
conf
DOI
10.1109/SBMicro.2015.7298154
Filename
7298154
Link To Document