Title :
Statistical analysis of static noise margins
Author :
Valeriu Beiu;Mihai Tache
Author_Institution :
College of Information Technology, United Arab Emirates University, Al Ain, United Arab Emirates
Abstract :
This paper presents preliminary results of a statistical analysis of the SNM of inverters (as the basic element of any SRAM bit cell). Results are statistical meaningful as probabilities are calculated accurately, and should lead to more precise, faster, and better yield estimates. Comparisons with Monte Carlo simulations are supporting such claims.
Keywords :
"Transistors","Inverters","Noise","Reliability","SRAM cells","Statistical analysis"
Conference_Titel :
Circuit Theory and Design (ECCTD), 2015 European Conference on
DOI :
10.1109/ECCTD.2015.7300090
