DocumentCode :
36739
Title :
A New Gas Sensor Based on MOSFET Having a Horizontal Floating-Gate
Author :
Chang-Hee Kim ; In-Tak Cho ; Jong-Min Shin ; Kyu-Bong Choi ; Jung-Kyu Lee ; Jong-Ho Lee
Author_Institution :
Inter-Univ. Semicond. Res. Center, Seoul Nat. Univ., Seoul, South Korea
Volume :
35
Issue :
2
fYear :
2014
fDate :
Feb. 2014
Firstpage :
265
Lastpage :
267
Abstract :
A new gas sensor based on metal-oxide- semiconductor field-effect transistor was fabricated and characterized. The sensor has p-type channel, floating-gate, and control-gate formed horizontally so that various kinds of sensing material can be used in this basic sensing structure. As a sensing material in this letter, SnOx was adopted to sense a target gas of NO2. Measured drain current was changed by 195% at a NO2 gas concentration of 50 ppm. Sensing speed is <;50 s at 180 °C.
Keywords :
MOSFET; gas sensors; tin compounds; MOSFET; SnO; control gate; drain current; gas concentration; gas sensor; horizontal floating gate; p type channel; sensing material; temperature 180 degC; Gas detectors; Logic gates; MOSFET; Silicon; Gas sensor; MOSFET; floating-gate; horizontal control-gate; sensing layer; work-function;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2013.2294722
Filename :
6691916
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=36739
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