• DocumentCode
    3674189
  • Title

    Resistivity anisotropy and surface morphology in ordered In/sub x/Ga/sub 1-x/P grown at 640/spl deg/C

  • Author

    J. Novak;S. Hasen;V. Cambel;R. Kudela;M. Kucera

  • Author_Institution
    Inst. of Electr. Eng., Slovak Acad. of Sci., Bratislava, Slovakia
  • fYear
    1998
  • Firstpage
    23
  • Lastpage
    26
  • Abstract
    We have studied the resistivity anisotropy of ordered In/sub x/Ga/sub 1-x/P epitaxial layers grown at 640/spl deg/C. Increasing the lattice mismatch leads to an increase in the resistivity anisotropy, which is higher than two orders of magnitude. We suppose that this effect is caused by additional scattering at the boundaries of ordered domains.
  • Keywords
    "Conductivity","Anisotropic magnetoresistance","Surface morphology","Epitaxial layers","Lattices","Temperature","Optical scattering","Surface reconstruction","Gallium arsenide","Semiconductor materials"
  • Publisher
    ieee
  • Conference_Titel
    Advanced Semiconductor Devices and Microsystems, 1998. ASDAM ´98. Second International Conference on
  • Print_ISBN
    0-7803-4909-1
  • Type

    conf

  • DOI
    10.1109/ASDAM.1998.730157
  • Filename
    730157
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3674189