Title :
On the quantum interference transistor based on the electrostatic Aharonov-Bohm effect
Author :
T. Figielski;T. Wosinski
Author_Institution :
Inst. of Phys., Polish Acad. of Sci., Warsaw, Poland
Abstract :
Solid-state analogue of the electrostatic Aharonov-Bohn effect has been predicted for a long time. Basing on this effect, hypothetical designs of quantum interference transistor have been proposed but, surprisingly, they have never been realised in practice. We show that this failure is principal due to inherent instability of such devices against charge fluctuations.
Keywords :
"Electrostatic interference","Electrons","Wire","Electrodes","Solids","Magnetic flux","Temperature","Voltage","Physics","Microelectronics"
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 1998. ASDAM ´98. Second International Conference on
Print_ISBN :
0-7803-4909-1
DOI :
10.1109/ASDAM.1998.730158