DocumentCode :
3674199
Title :
On the quantum interference transistor based on the electrostatic Aharonov-Bohm effect
Author :
T. Figielski;T. Wosinski
Author_Institution :
Inst. of Phys., Polish Acad. of Sci., Warsaw, Poland
fYear :
1998
Firstpage :
27
Lastpage :
30
Abstract :
Solid-state analogue of the electrostatic Aharonov-Bohn effect has been predicted for a long time. Basing on this effect, hypothetical designs of quantum interference transistor have been proposed but, surprisingly, they have never been realised in practice. We show that this failure is principal due to inherent instability of such devices against charge fluctuations.
Keywords :
"Electrostatic interference","Electrons","Wire","Electrodes","Solids","Magnetic flux","Temperature","Voltage","Physics","Microelectronics"
Publisher :
ieee
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 1998. ASDAM ´98. Second International Conference on
Print_ISBN :
0-7803-4909-1
Type :
conf
DOI :
10.1109/ASDAM.1998.730158
Filename :
730158
Link To Document :
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