Title :
Characterisation of 2DEG Hall probes in high magnetic field at 4.2 K
Author :
V. Cambel;R. Kudela;D. Gregusova;S. Haseohrl;P. Elias;J. Novak
Author_Institution :
Inst. of Electr. Eng., Slovak Acad. of Sci., Bratislava, Slovakia
Abstract :
We paper summarises our results our the characterisation of 2DEG Hall probes, prepared by MOCVD technology, in magnetic fields up to 12 T at temperatures up to 1.2 K.
Keywords :
"Hall effect devices","Magnetic field measurement","Probes","Electrons","Indium phosphide","Magnetic flux","High temperature superconductors","Magnetic sensors","MOCVD","Magnetic semiconductors"
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 1998. ASDAM ´98. Second International Conference on
Print_ISBN :
0-7803-4909-1
DOI :
10.1109/ASDAM.1998.730159
