DocumentCode
3674210
Title
Characterisation of 2DEG Hall probes in high magnetic field at 4.2 K
Author
V. Cambel;R. Kudela;D. Gregusova;S. Haseohrl;P. Elias;J. Novak
Author_Institution
Inst. of Electr. Eng., Slovak Acad. of Sci., Bratislava, Slovakia
fYear
1998
Firstpage
31
Lastpage
34
Abstract
We paper summarises our results our the characterisation of 2DEG Hall probes, prepared by MOCVD technology, in magnetic fields up to 12 T at temperatures up to 1.2 K.
Keywords
"Hall effect devices","Magnetic field measurement","Probes","Electrons","Indium phosphide","Magnetic flux","High temperature superconductors","Magnetic sensors","MOCVD","Magnetic semiconductors"
Publisher
ieee
Conference_Titel
Advanced Semiconductor Devices and Microsystems, 1998. ASDAM ´98. Second International Conference on
Print_ISBN
0-7803-4909-1
Type
conf
DOI
10.1109/ASDAM.1998.730159
Filename
730159
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