DocumentCode
3674361
Title
InGaAsSb/AlGaAsSb heterojunction photodetectors for wavelength 1.8-2.4 /spl mu/m grown by LPE
Author
T.T. Piotrowski;A. Piotrowska;K. Golaszewska;M. Guziewicz;E. Kaminska;J. Katcki;E. Papis;I.A. Andreev;M.P. Mikhailova;E.V. Kunitsyna;Yu.P. Yakovlev;J. Adamczewska
Author_Institution
Inst. of Electron. Technol., Warsaw, Poland
fYear
1998
Firstpage
95
Lastpage
98
Abstract
The paper reports on progress in the technology of GaSb-based mid-infrared photodetectors. Photodiode structures were made by LPE and fabricate as mesa-type diodes by RIE etching in CCl/sub 4//H2 plasma. Mesa passivation was carried out in (NH/sub 4/)/sub 2/S water solution. Analysis of PD performance through the measurements of current-voltage and spectral responsivity characteristics have shown that (NH/sub 4/)/sub 2/S passivated photodiode structures are characterized by dark current I/sub d//spl les/13 /spl mu/A at 1 V reverse bias, and quantum efficiency of 0.5/spl divide/0.7 at /spl lambda/=2.3 /spl mu/m and T=300 K.
Keywords
"Heterojunctions","Photodetectors","Photodiodes","Plasma measurements","Paper technology","Diodes","Etching","Hydrogen","Plasma applications","Plasma properties"
Publisher
ieee
Conference_Titel
Advanced Semiconductor Devices and Microsystems, 1998. ASDAM ´98. Second International Conference on
Print_ISBN
0-7803-4909-1
Type
conf
DOI
10.1109/ASDAM.1998.730175
Filename
730175
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