Title :
Structural and electrical properties of amorphous nitrogen doped SiC thin films annealed by pulsed electron beam
Author :
J. Huran;J. Safrankova;J. Hotovy;A.P. Kohzev;N.I. Balalykin
Author_Institution :
Inst. of Electr. Eng., Slovak Acad. of Sci., Bratislava, Slovakia
Abstract :
The properties of nitrogen-doped amorphous SiC films irradiated by pulsed electron beams are presented. The I-V characteristics of diodes made of irradiated SiC films grown on silicon substrates were investigated. The results showed that the film conductivity increased by about two orders of magnitude as nitrogen fraction was increased from 10 at% to 14 at%. The film conductivity was enhanced by about one order of magnitude as a result of two-fold increase of pulsed electron beam irradiation.
Keywords :
"Amorphous materials","Nitrogen","Silicon carbide","Transistors","Annealing","Electron beams","Plasma temperature","Semiconductor films","Substrates","Conductivity"
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 1998. ASDAM ´98. Second International Conference on
Print_ISBN :
0-7803-4909-1
DOI :
10.1109/ASDAM.1998.730193
