• DocumentCode
    3674551
  • Title

    Dissipative transport in monolayer MoS2: role of remote coulomb scattering

  • Author

    K. Khair;S. Ahmed

  • Author_Institution
    Department of Electrical and Computer Engineering, Southern Illinois University at Carbondale, 1230 Lincoln Drive, Carbondale, IL 62901, USA
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    In this work, we calculate the scattering rates in monolayer MoS2 due to various a) intrinsic phonon, b) remote phonon, and c) remote Coulomb processes. We then study the electron transport in a monolayer MoS2 based FET device employing a particle based Monte Carlo device simulator. Our results show that the total scattering rate is strongly dominated by remote coulomb scattering, which, when compared to the ballistic regime, degrades the drain current by ~78%.
  • Keywords
    "Phonons","Field effect transistors","Monte Carlo methods","Optical scattering","Logic gates","Adaptive optics"
  • Publisher
    ieee
  • Conference_Titel
    Computational Electronics (IWCE), 2015 International Workshop on
  • Type

    conf

  • DOI
    10.1109/IWCE.2015.7301937
  • Filename
    7301937
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3674551